? glass sealed envelope. (msd) ? v rm =100v guaranteed ? high reliability ? case: do-35, glass case ? polarity: color band denotes cathode ? weight: 0.004 ounces, 0.13 grams maximum dc reverse voltage v r v maximum recurrent peak reverse voltage v rm v average forward rectified current half wave rectification with resistive load i o ma forward surge current t<1ms t=1ms t=1s power dissipation (note) p tot mw junction temperature t j ?? storage temperature range t stg ?? forw ard voltage @1n914,1N914A,i f =10ma 1n914b,i f =5ma 1n914b,i f =100ma leakage current @v r =20v n a @v r =75v a @v r =20v,t j =150 ?? a capacitance @ v r =0v,f=1mh z c tot pf reverse recovery time @i f =10ma,i r =10ma, r l =100 ? ,measured at i r =1ma voltage rise w hen sw itching on tested w ith 50ma pulses t r =20ns v fr v thermal resistance junction to ambient (note ) r ja ?? /w note:valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. ns - 2.5 - - - 500 a -5 0.5 75 100 units - - - min - - 25 reverse voltage: 75 v currento 75 ma do - 35 units max typ 250 75 1n914,1N914A,1n914b t rr 8 4 - -- - i r 4.0 - 65 --- + 175 175 50 - 1.0 1.0 - i fsm v f v 0.62 -- - 0.72 1.0 note:valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. dimensions in millimeters 1n914/1N914A/1n914b small signal switching diode s maximum ratings rating at 25 o c ambient temperature unle ss otherwise specified. electrical characteristics rating at 25 o c ambient temperature unle ss otherwise specified. features m echani cal d ata http://www.luguang.cn mail:lge@luguang.cn
1n914b 1n914,1N914A -2 10 -1 10 1 10 3 10 ma i f v f 2 10 0 12 v 10s 1 1 10 100 v=tp/t 0.1 a -1 10 i fsm tp -2 10 -3 10 -5 10 n=0 0.1 0.2 0.5 t=1/fp tp i fsm t fig.1 -- admissible power dissipation nnnnnn versus ambient temperature fig.2 -- forward characteristics fig.3 -- admissible repetitive peak forward current versus pulse duration 100 200 300 400 0 100 200 ?? 500 50 15 0 350 250 450 0 mw p tot t a 1n914/1N914A/1n914b small signal switching diodes ratings and charactieristic curves http://www.luguang.cn mail:lge@luguang.cn
1.1 1.0 0.8 0.9 0.7 0 2 4 6 8 10v t j =25 f=1mhz ctot(ov) v r ctot(v r ) v o 5k 2nf v rf =2v d. u. t. 60 0 100 200?? 10 1 na 3 10 2 10 4 10 v r =20v 10 ma r f 2 10 3 10 4 10 1 -2 10 -1 10 1 1 0 2 10 i f t j =25 ?? f=1khz fig. 6 -- leakage current versus juncti on temperature ff fi g. 7 -- dynami c forward resi stance fff versus forward current fi g. 4 -- recti fi cati on effi ci ency jjjjjjjj measurement circui t fi g. 5 -- relati ve capaci tance versus jjjjjjjjjjjjjj voltage 1n914/1N914A/1n914b small signal switching diodes ratings and charactieristic curves http://www.luguang.cn mail:lge@luguang.cn
|